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dfa150ba 3-phase diode bridge thyristor maximum ratings ?? unless otherwise tj=25 / t j = 2 5 symbol ? item ?? ratings unit g df a150ba80 df a150ba160 v rrm repetitive peak reverse v oltage ` R R 800 1600 v v rsm non-repetitive peak reverse v oltage ` R R 960 1700 v v drm repetitive peak of f-state v oltage ` R R 800 1600 v symbol ? item ?? conditions ratings unit g diode y ??|? ? i d output curr entd.c. ? thr ee phase full wave ? t c=105 150 a i fsm sur ge forwar d curr ent ` 1cycle, 50/60hz, peak value, non-r epetitive 5 0 / 6 0 h z , g 1 , , , R 1460/1600 a tj operating junction t emperatur e 40150 i rrm repetitive peak reverse curr entmax1 1 v d =700vtj=25 0.05 ma i rrm repetitive peak reverse c urr entmax2 2 v d =v rrm tj=25 0.1 ma i rrm repetitive peak reverse curr entmax3 3 v d =v rrm tj=150 15 ma v fm forwar d v oltage dr opmax R i fm =150ainst.measur ement ? r y 1.35 v r th j-c thermal impedancemax junction to caset otal ` g t o t a l 0.09 / w thyristor y ??? ? i t a v a verage on-state curr ent ? single phase hulf wave.180condutiont c=105 ? 1 8 0 , g ? ? t c = 1 0 5 150 a i tsm sur ge on-st ate curr ent ` ?cycle, 50/60hz, peak value, non-r epetitive 5 0 / 6 0 h z , g 1 , , , R 1460/1600 a i 2 t i 2 tfor fusing \ r g e 10670 a 2 s di/dt critica rate of rise of on-state curr ent R N i g =100ma v d =?v drm di g /dt0.1a/s tj=25 150 a/ s tj operating junction t emperatur e 40150 i drm i rrm repetitivepeak of f-state curr entmax v d =v drm v d =v rrm tj=135 100 ma v tm peak on-state v olt agemax R i tm =150ainst. measur ement ? r y 1.35 v i gt /v gt gate t rigger curr entmax/v oltagemax ` / R i t =1av d =6vtj=25 70/ 3 ma / v dv/dt critical rate of rise of of f-state v oltagemin R R N v d =?v drm tj=125 500 v/ s v d =?v drm tj=126150 50 i h holding curr ent tj=25 100 ma i l latching curr ent tj=25 80 ma r th j-c thermal impedancemax junction to case ` g 0.22 / w general y
?. t stg storage t emperatur e 40125 mounting tor que mountingm5 ? r e c o m m e n d e d v a l u e X 1.52.51525 2.7 28 n?m kgf?cm t erminalsm5 r e c o m m e n d e d v a l u e X 1.52.51525 2.7 28 r th c-f thermal impedancmax thermal conductivity of silicone gr ease=710 -3 w/ cm? ef fective rate of contact. 0.6 = 7 1 0 - 3 w / c m ? 0 . 6 0.1 / w v iso isolation br eakdown v oltage r.m.s. ~ F g a.c., 1minute ` g a . c . 1 g 2500 v mass | t ypical value 150 g ."9 ."9 ."9 unit gmm ul; e76102 m ? ? ? %'"@#" ( 5): , 5): df a150ba is isolated power module designed for the recti?cation requiring prevention rush current. this module has six diodes connected in 3-phase bridge, and a thyristor connected in series with the dc line. sanrex ? ? t ? ? d f a 1 5 0 b a 3 ? ? ? x z ? w - s ?; q ` o
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